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STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 제목
- STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 제목 (타언어)
- STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 저자
- Donghun Lee
- 발행일
- 2009-03-18
- 학회명
- Annual Meeting of the American Physical Society
- 개최국가
- 미국
- 학회 개최일
- 2009-03-16 ~ 2009-03-20