Complex Formation and Dissociation Dynamics on Amorphous Silica Surfaces

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9
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10

초록

Benzene complex formation and dissociation dynamics with silanols on the amorphous silica surfaces of nanoporous SiO2, from a benzene/carbon tetrachloride solution, were measured by the growth of off-diagonal peaks in the two-dimensional infrared (2D IR) chemical exchange spectrum of the isolated Si-OD stretch. The presence of two types of isolated silanols, termed type I and II, was revealed, with dissociation time constants of 82 and 4.0 ps, respectively. The type I silanols are associated with the main IR absorption feature in the Si-OD stretching region, while the type II silanols give rise to a broader shoulder to lower frequency. Polarization selective pump-probe (PSPP) measurements provided the vibrational lifetimes and orientational relaxation rates of the two silanols in the CCl4 (free) and benzene (complex) environments. The type II silanols constitute roughly 30% of the isolated silanol population and exhibit a substantially faster rate of vibrational relaxation, making the type I dynamics the dominant contribution to the PSPP and 2D IR signals. From the measured dissociation times, the enthalpies of formation for the two surface complexes were obtained, with the formation of the type I complex being significantly more exothermic. As the type II site is preferentially removed from the amorphous silica surface with increasing activation temperature, the results provide a reasonable explanation for the increased exothermicity of benzene adsorption on silica with increasing activation temperature in previous calorimetry experiments.

키워드

NUCLEAR-MAGNETIC-RESONANCECROSS-POLARIZATIONSILANOL GROUPSFLUORESCENCE DEPOLARIZATIONADSORPTIONSPECTROSCOPYMOLECULESEXCHANGEGELTHERMODYNAMICS
제목
Complex Formation and Dissociation Dynamics on Amorphous Silica Surfaces
저자
Yamada, Steven A.Hung, Samantha T.Shin, Jae YoonFayer, Michael D.
DOI
10.1021/acs.jpcb.1c01225
발행일
2021-05-06
유형
Article
저널명
The Journal of Physical Chemistry B
125
17
페이지
4566 ~ 4581