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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors
- Jeon, D. -Y.;
- Park, S. J.;
- Mouis, M.;
- Barraud, S.;
- Kim, G. -T.;
- 외 1명
WEB OF SCIENCE
10SCOPUS
13초록
A new method for the extraction of flat-band voltage (V-fb) and channel doping concentration (N-d) in Tri-gate Junctionless Transistors (JLTs) is presented. The new method, based on the relationship between the top-effective width (W-top_eff) in accumulation and the effective width (Weir) in partial depletion, enables the extraction of V-fb, and Nd of JLT devices (here as approximate to 0.61 V and approximate to 6.4 x 10(18) cm(-3), respectively). The validity of the new method is also proved by 2D numerical simulations. Furthermore, it is emphasized that the sidewall accumulation current (I-d_side) behavior of Tri-gate JLT devices is found to decrease dramatically near Vfb, allowing an estimation of the V-fb position of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.
키워드
- 제목
- A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors
- 저자
- Jeon, D. -Y.; Park, S. J.; Mouis, M.; Barraud, S.; Kim, G. -T.; Ghibaudo, G.
- 발행일
- 2013-03
- 유형
- Article
- 권
- 81
- 페이지
- 113 ~ 118
- 언어
- ENG
- 출판사
- PERGAMON-ELSEVIER SCIENCE LTD
- 발행국가
- 영국
- 분량
- 6 페이지
- ISSN
- E 1879-2405
P 0038-1101