Electrical characterizations of Neutron-irradiated SiC Schottky diodes

초록

Neutrons with an average energy of 9.8 +/- 0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75 x 10(11) neutron/cm(2), the Schottky barrier height, ideality factor, and the leakage Currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5 x 10(11) neutron/cm(2). In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75 x 10(11) neutron/cm(2).

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