Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

doi:10.1143/APEX.3.022101

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Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

Namkoong, Gon;
Trybus, Elaissa;
Cheung, Maurice C.;
Doolittle, W. Alan;
Cartwright, Alexander N.;
외 3명

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9

초록

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/APEX.3.022101

키워드

TIME-RESOLVED PHOTOLUMINESCENCE; DOPED GAN; ZNO; LUMINESCENCE; INGAN; EPITAXY; GROWTH; DECAY

제목: Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

저자: Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

DOI: 10.1143/APEX.3.022101

발행일: 2010

유형: Article

저널명: Applied Physics Express

권: 3

호: 2