Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors

초록

In this study, we propose the (PEA)(2)MA(3)Pb(4)I(13), a quasi-two-dimensional (2D) halide perovskite, in the realm of resistive switching memory devices. A quasi-2D perovskite film (PEA)(2)MA(3)Pb(4)I(13), with a thickness measuring 450 nm, has been effectively fabricated on a silicon substrate coated with platinum through an all-solution process conducted at low temperatures. The constructed resistive switching memory devices, incorporating an Ag/(PEA)(2)MA(3)Pb(4)I(13)/Pt/Ti/SiO2/Si configuration, display dependable and consistent bipolar switching attributes. The device shows an ultra-low operating voltage of less than +0.1 V, an impressive high ON/OFF ratio exceeding 10(8), reversible resistive switching via pulse voltage operation, and the capability for multilevel data storage. In addition, there is little variation in device characteristics depending on the location on a wafer or device size.

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