Barrier Height at the Graphene and Carbon Nanotube Junction

Kim, Tae Geun; Kim, Un Jeong; Lee, Si Young; Lee, Young Hee; Yu, Yun Seop; Hwang, Sung Woo; Kim, Sangsig

doi:10.1109/TED.2014.2317799

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Barrier Height at the Graphene and Carbon Nanotube Junction

Kim, Tae Geun;
Kim, Un Jeong;
Lee, Si Young;
Lee, Young Hee;
Yu, Yun Seop;
... Kim, Sangsig;
외 1명

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초록

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

키워드

Barrier height; carbon nanotube (CNT); FET; graphene; SPICE; FIELD-EFFECT TRANSISTORS; TRANSPARENT; CONTACT; VOLTAGE

제목: Barrier Height at the Graphene and Carbon Nanotube Junction

저자: Kim, Tae Geun; Kim, Un Jeong; Lee, Si Young; Lee, Young Hee; Yu, Yun Seop; Hwang, Sung Woo; Kim, Sangsig

DOI: 10.1109/TED.2014.2317799

발행일: 2014-06

유형: Article

저널명: IEEE Transactions on Electron Devices

권: 61

호: 6

페이지: 2203 ~ 2207

언어: ENG

출판사: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

발행국가: 미국

분량: 5 페이지

ISSN: E 1557-9646
P 0018-9383