Filament-free memristors for computing

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초록

Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.

키워드

FERROELECTRIC TUNNEL-JUNCTIONS; LOW-POWER; CONCENTRATION POLARIZATION; SYNAPTIC PLASTICITY; DYNAMIC MEMRISTOR; RESISTIVE MEMORY; MOTT TRANSITION; DEVICES; BEHAVIOR; FUTURE
제목
Filament-free memristors for computing
저자
Choi, Sanghyeon; Moon, Taehwan; Wang, Gunuk; Yang, J. Joshua
DOI
10.1186/s40580-023-00407-0
발행일
2023-12-19
유형
Review
저널명
Nano Convergence
권
10
호
1