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MOCVD growth of GaN on sapphire substrate using N-atom source based on dielectric barrier discharge method
- 제목
- MOCVD growth of GaN on sapphire substrate using N-atom source based on dielectric barrier discharge method
- 저자
- BYUN, Dong Jin
- 학회명
- The 9th Seoul International Symposium
- 학회 개최일
- 2002-01-01 ~ 2002-01-02