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Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes
- Lee, Young Su;
- Choi, Hong Goo;
- Hahn, Cheol-Koo;
- Kim, Su Jin;
- Kim, Tae Geun
Citations
WEB OF SCIENCE
2Citations
SCOPUS
3초록
We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 x 10(-7) Omega cm(2), 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.
키워드
Improvement; HEMTs; Ti/Al/Ti/Ni/Au; Ohmic contact; DC performance; OHMIC CONTACTS; N-GAN; F(MAX)
- 제목
- Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes
- 저자
- Lee, Young Su; Choi, Hong Goo; Hahn, Cheol-Koo; Kim, Su Jin; Kim, Tae Geun
- 발행일
- 2010-04
- 유형
- Article; Proceedings Paper
- 권
- 56
- 호
- 4
- 페이지
- 1287 ~ 1290