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Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing
- Lee, Jung Hwan;
- Shin, Dongguen;
- Rhee, Ryan;
- Yun, Sangeun;
- Yeom, Kyung Mun;
- ... Noh, Jun Hong;
- 외 5명
WEB OF SCIENCE
36SCOPUS
37초록
Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2 _based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
키워드
- 제목
- Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing
- 저자
- Lee, Jung Hwan; Shin, Dongguen; Rhee, Ryan; Yun, Sangeun; Yeom, Kyung Mun; Chun, Do Hyung; Lee, Sunje; Kim, Dongho; Yi, Yeonjin; Noh, Jun Hong; Park, Jong Hyeok
- 발행일
- 2019-11-07
- 유형
- Article
- 권
- 10
- 호
- 21
- 페이지
- 6545 ~ 6550