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Low temperature growth of GaN on α-Al2O3 and Si substrate using an atomic nitrogen source based on dielectric barrier discharge
- 제목
- Low temperature growth of GaN on α-Al2O3 and Si substrate using an atomic nitrogen source based on dielectric barrier discharge
- 저자
- BYUN, Dong Jin
- 학회명
- Abstracts of The Third International Conference on Nitride Semiconductors
- 개최지
- Montpellier, France
- 학회 개최일
- 1999-07-04 ~ 1999-07-09