A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

  • Jo, Seo-Hyeon; 
  • Kang, Dong-Ho; 
  • Shim, Jaewoo; 
  • Jeon, Jaeho; 
  • Jeon, Min Hwan; 
  • ... Yu, Hyun-Yong; 
  • 외 7명
Citations

WEB OF SCIENCE

161
Citations

SCOPUS

167

초록

The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

키워드

nondegenerate doping; photodetectors; PPh3; type-converted FET; WSe2; FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; WSE2; GRAPHENE; PHOTORESPONSE; GROWTH; MONO
제목
A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
저자
Jo, Seo-Hyeon; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Jeon, Min Hwan; Yoo, Gwangwe; Kim, Jinok; Lee, Jaehyeong; Yeom, Geun Young; Lee, Sungjoo; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin-Hong
DOI
10.1002/adma.201600032
발행일
2016-06-22
유형
Article
저널명
Advanced Materials
권
28
호
24
페이지
4824 ~ 4831