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초록
We investigated 2-D dopant distribution in a POCl3-diffused n(+) emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n(+) emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
키워드
Junction; selective chemical etching; Si interstitial; solar cells; transmission electron microscopy (TEM); PHOSPHORUS DIFFUSION; MICROSCOPY; MECHANISM; CONTACTS
- 제목
- Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells
- 저자
- Ok, Young-Woo; Rohatgi, Ajeet; Kil, Yeon-Ho; Park, Sung-Eun; Kim, Dong-Hwan; Lee, Joon-Sung; Choi, Chel-Jong
- 발행일
- 2011-03
- 유형
- Article
- 권
- 32
- 호
- 3
- 페이지
- 351 ~ 353