Parasitic p-n junctions formed at V-pit defects in p-GaN

Vergeles, P. S.; Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.; Chernykh, A. V.; Vasilev, A. A.; Kochkova, A. I.; Lee, In-Hwan; Pearton, Stephen J.

doi:10.1063/5.0047742

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Parasitic p-n junctions formed at V-pit defects in p-GaN

Vergeles, P. S.;
Yakimov, E. B.;
Polyakov, A. Y.;
Shchemerov, I. V.;
Chernykh, A. V.;
... Lee, In-Hwan;
외 3명

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The luminescent and recombination properties of V-pit defects in p-GaN(Mg) grown by metalorganic chemical vapor deposition (MOCVD) were studied by scanning electron microscopy (SEM) in the secondary electron, cathodoluminescence (CL), and electron beam induced current (EBIC) modes, combined with CL spectra measurements and EBIC collection efficiency measurements. Similar studies were performed on low-dislocation-density freestanding n-GaN crystals. For MOCVD p-GaN films, the SEM investigations were supplemented by capacitance-voltage, current-voltage, deep level transient spectroscopy analysis with Ni Schottky diode, and Ohmic contacts. These experiments show that V-pits in p-GaN increase the leakage current of Schottky diodes, as in n-GaN films and crystals. EBIC imaging and EBIC collection efficiency results suggest that in the region of V-pits, a parasitic p-n junction is formed. We also observe that, in V-pits, the CL spectra the contribution of the 3.2eV defect band is strongly enhanced compared to the 3eV blue CL band that dominates the spectra.

키워드

DIFFUSION LENGTH; DEEP TRAPS; DISLOCATIONS; LUMINESCENCE; TEMPERATURE

제목: Parasitic p-n junctions formed at V-pit defects in p-GaN

저자: Vergeles, P. S.; Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.; Chernykh, A. V.; Vasilev, A. A.; Kochkova, A. I.; Lee, In-Hwan; Pearton, Stephen J.

DOI: 10.1063/5.0047742

발행일: 2021-04-21

유형: Article

저널명: Journal of Applied Physics

권: 129

호: 15