ScholarWorks@고려대학교

상세 보기

A Study on the Characteristics of MOS Structure using HfO2 as High-k Gate Dielectric Film

  • Sung, Man Young
제목
A Study on the Characteristics of MOS Structure using HfO2 as High-k Gate Dielectric Film
저자
Sung, Man Young
학회명
Proceeding of KIEEME Annual Autumn Conference 2002
개최지
Proceeding of KIEEME Annual Autumn Conference 2002
학회 개최일
2002-11-08

ScholarWorks@고려대학교

02841 서울특별시 성북구 안암로 145 Tel. 02-3290-2963

COPYRIGHT © 고려대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.