Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

Lee, N. J.; An, B. H.; Koo, A. Y.; Ji, H. M.; Cho, J. W.; Choi, Y. J.; Kim, Y. K.; Kang, C. J.

doi:10.1007/s00339-011-6319-y

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Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

Lee, N. J.;
An, B. H.;
Koo, A. Y.;
Ji, H. M.;
Cho, J. W.;
... Kim, Y. K.;
외 2명

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초록

Hysteretic resistive switching behavior in a silver selenide (Ag2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 mu m, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

키워드

SELENIDE THIN-FILMS; SILVER SELENIDE; SUPERIONIC CONDUCTORS; PHASE-TRANSITION; AG2SE; AG2TE; AG; MAGNETORESISTANCE; TEMPERATURE; DYNAMICS

제목: Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

저자: Lee, N. J.; An, B. H.; Koo, A. Y.; Ji, H. M.; Cho, J. W.; Choi, Y. J.; Kim, Y. K.; Kang, C. J.

DOI: 10.1007/s00339-011-6319-y

발행일: 2011-03

유형: Article

저널명: Applied Physics A: Materials Science & Processing

권: 102

호: 4

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