Detector performance and defect densities in CdZnTe after two-step annealing

Kim, Eunhye; Kim, Yonghoon; Bolotnikov, A. E.; James, R. B.; Kim, Kihyun

doi:10.1016/j.nima.2019.01.064

상세 보기

Detector performance and defect densities in CdZnTe after two-step annealing

Kim, Eunhye;
Kim, Yonghoon;
Bolotnikov, A. E.;
James, R. B.;
Kim, Kihyun

Citations

WEB OF SCIENCE

19

Citations

SCOPUS

23

초록

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200-220 C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

키워드

CdZnTe; Nanoscale defects; Microscale defects; Annealing; Dislocation; Stacking fault

제목: Detector performance and defect densities in CdZnTe after two-step annealing

저자: Kim, Eunhye; Kim, Yonghoon; Bolotnikov, A. E.; James, R. B.; Kim, Kihyun

DOI: 10.1016/j.nima.2019.01.064

발행일: 2019-04-11

유형: Article

저널명: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

권: 923

페이지: 51 ~ 54