Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

Park, C. S.; Choi, H. K.; Yang, C. U.; Park, Y. D.; Son, J. Y.; Shon, Yoon

doi:10.1016/j.jcrysgro.2011.09.054

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Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

Park, C. S.;
Choi, H. K.;
Yang, C. U.;
Park, Y. D.;
Son, J. Y.;
외 1명

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초록

We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K. respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan (5 vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

키워드

Molecular beam epitaxy; GaAs; Ferromagnetic; Ferroelectric; THIN-FILMS; FERROELECTRICITY; FATIGUE

제목: Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

저자: Park, C. S.; Choi, H. K.; Yang, C. U.; Park, Y. D.; Son, J. Y.; Shon, Yoon

DOI: 10.1016/j.jcrysgro.2011.09.054

발행일: 2011-12-01

유형: Article

저널명: Journal of Crystal Growth

권: 336

호: 1

페이지: 20 ~ 23