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Etching Characteristics of Pt/SrBi2Ta2O9(SBT) and CeO2 Layers by Using the Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) Process and Fabrication of Metal Ferroelectric Insulator Semiconductor Field Effect Transistor(MFISFET)

PARK, JUNG HO

제목: Etching Characteristics of Pt/SrBi2Ta2O9(SBT) and CeO2 Layers by Using the Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) Process and Fabrication of Metal Ferroelectric Insulator Semiconductor Field Effect Transistor(MFISFET)

저자: PARK, JUNG HO

학회명: the 3rd International Symposium on Designing , Processing and Properties of Advanced Engineering Materials(ISAEM)

개최지: Jeju, Korea

학회 개최일: 2003-11-05 ~ 2003-11-08