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Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
- Seo, Yujin;
- Kim, Choong-Ki;
- Lee, Tae-In;
- Hwang, Wan Sik;
- Yu, Hyun-Yong;
- 외 2명
Citations
WEB OF SCIENCE
2Citations
SCOPUS
2초록
Aluminumoxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-trappingand low-frequency noise analyses.
키워드
Aluminum oxynitride (AlON); border trap; germanium; germanium oxide (GeO); low-frequency noise (LFN); LAYER; GE; DEPOSITION
- 제목
- Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
- 저자
- Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin
- 발행일
- 2017-10
- 유형
- Article
- 권
- 64
- 호
- 10
- 페이지
- 3998 ~ 4001
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1557-9646
P 0018-9383