A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells

  • Song, Jooyong
  • Park, Sungeun
  • Kwon, Soonwoo
  • Kim, Sungtak
  • Kim, Hyunho
  • 외 3명
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초록

The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate. (C) 2011 Elsevier B. V. All rights reserved.

키워드

AluminumSilicon nitrideLocal contactRear passivationBack surface fieldSolar cellSILICON-NITRIDESURFACE PASSIVATIONBULK
제목
A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells
저자
Song, JooyongPark, SungeunKwon, SoonwooKim, SungtakKim, HyunhoTark, Sung JuYoon, SewangKim, Donghwan
DOI
10.1016/j.cap.2011.06.028
발행일
2012-01
유형
Article
저널명
Current Applied Physics
12
1
페이지
313 ~ 318