Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED

Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED
제목
Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED
제목 (타언어)
Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED
저자
Hong MunPyo
발행일
2017-08-31
학회명
iMiD2017
개최국가
대한민국
학회 개최일
2017-08-28 ~ 2017-08-31