Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Okumura, Satoshi; Yamamoto, Seiichi; Nagura, Aya; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshikawa, Akira

doi:10.1016/j.jcrysgro.2016.04.037

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Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

Kamada, Kei;
Shoji, Yasuhiro;
Kochurikhin, Vladimir V.;
Okumura, Satoshi;
Yamamoto, Seiichi;
... Yeom, Jung Yeol;
외 6명

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43

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SCOPUS

44

초록

The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs. (C) 2016 Elsevier B.V. All rights reserved.

키워드

Single crystal growth; Oxides; Scintillator materials; Scintillators; LSO; EFFICIENT

제목: Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

저자: Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Okumura, Satoshi; Yamamoto, Seiichi; Nagura, Aya; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshikawa, Akira

DOI: 10.1016/j.jcrysgro.2016.04.037

발행일: 2016-10-15

유형: Article; Proceedings Paper

저널명: Journal of Crystal Growth

권: 452

페이지: 81 ~ 84