Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

  • Seong, Tae-Geun
  • Choi, Kyu Bum
  • Seo, In-Tae
  • Oh, Joon-Ho
  • Moon, Ji Won
  • 외 2명
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초록

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10(5) s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722797]

키워드

MEMORY
제목
Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method
저자
Seong, Tae-GeunChoi, Kyu BumSeo, In-TaeOh, Joon-HoMoon, Ji WonHong, KwonNahm, Sahn
DOI
10.1063/1.4722797
발행일
2012-05-21
유형
Article
저널명
Applied Physics Letters
100
21