Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells

  • Cho, Sung-Bin
  • Hong, Kyoung-Kook
  • Huh, Joo-Youl
  • Park, Hyun Jung
  • Jeong, Ji-Weon
Citations

WEB OF SCIENCE

48
Citations

SCOPUS

50

초록

In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 degrees C were examined by varying the oxygen partial pressure (Po-2) in the firing ambience The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer Without any oxygen in the firing ambience, no Ag crystallite was formed The Po-2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder. via its influence on the reaction forming the Ag. ions The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells (C) 2009 Elsevier B.V. All rights reserved

키워드

Ag thick-film metallizationOxygen partial pressureInterfacial reactionGlass fritSilicon solar cellGLASS FRIT
제목
Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells
저자
Cho, Sung-BinHong, Kyoung-KookHuh, Joo-YoulPark, Hyun JungJeong, Ji-Weon
DOI
10.1016/j.cap.2009.11.054
발행일
2010-03
유형
Article; Proceedings Paper
저널명
Current Applied Physics
10
페이지
S222 ~ S225