Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

Park, Sungeun; Kim, Young Do; Bae, Soohyun; Kim, Seongtak; Song, Jooyong; Kim, Hyunho; Park, Hyo Min; Kim, Soomin; Tark, Sung Ju; Kim, Donghwan

doi:10.1007/s12540-012-4022-y

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Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

Park, Sungeun;
Kim, Young Do;
Bae, Soohyun;
Kim, Seongtak;
Song, Jooyong;
외 5명

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WEB OF SCIENCE

4

Citations

SCOPUS

4

초록

N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.

키워드

aluminium rear emitter; Si solar cells; junction properties; rapid thermal process; SILICON-WAFERS

제목: Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

저자: Park, Sungeun; Kim, Young Do; Bae, Soohyun; Kim, Seongtak; Song, Jooyong; Kim, Hyunho; Park, Hyo Min; Kim, Soomin; Tark, Sung Ju; Kim, Donghwan

DOI: 10.1007/s12540-012-4022-y

발행일: 2012-08

유형: Article

저널명: Metals and Materials International

권: 18

호: 4

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