Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs Foreword

초록

In this study, transient leakage current caused by a parasitic bipolar junction transistor (BJT) in nanowire-type gate-all-around metal-oxide-semiconductor field-effect transistors is physically modeled for circuit design. The model considers the majority carrier concentration in the body, which is modulated by the gate-to-body bias. The parasitic BJT gain is dependent on the majority carrier concentration, which exceeds the body doping concentration in transient conditions. Three-dimensional technology computer-aided design simulation is performed to verify the model. The model accurately predicts the transient leakage current according to various structural parameters.

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