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A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler
- Kim, Jungsoo;
- Seo, Myeong-Gyo;
- Rieh, Jae-Sung
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4초록
A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from - 15.3 to - 10.8 dBm. The peak output power was - 10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was - 71 dBc/Hz at 1 MHz offset.
키워드
CMOS; Colpitts; Frequency Doubler; Oscillator; Signal Source
- 제목
- A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler
- 저자
- Kim, Jungsoo; Seo, Myeong-Gyo; Rieh, Jae-Sung
- 발행일
- 2016-10
- 유형
- Article
- 저널명
- JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE
- 권
- 16
- 호
- 4
- 페이지
- 229 ~ 231
- 언어
- ENG
- 출판사
- KOREAN INST ELECTROMAGNETIC ENGINEERING & SCIENCE
- 발행국가
- 대한민국
- 분량
- 3 페이지
- ISSN
- E 2234-8395
P 2234-8409