Conducting surface layers formed by hydrogenation of O-implanted beta-Ga2O3

Polyakov, A. Y.; Vasilev, A. A.; Shchemerov, I. V.; Chernykh, A. V.; Shetinin, I. V.; Zhevnerov, E. V.; Kochkova, A. I.; Lagov, P. B.; Miakonkikh, A. V.; Pavlov, Yu. S.; Kobets, U. A.; Lee, In-Hwan; Kuznetsov, A.; Pearton, S. J.

doi:10.1016/j.jallcom.2023.169258

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Conducting surface layers formed by hydrogenation of O-implanted beta-Ga2O3

Polyakov, A. Y.;
Vasilev, A. A.;
Shchemerov, I. V.;
Chernykh, A. V.;
Shetinin, I. V.;
... Lee, In-Hwan;
외 8명

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초록

Lightly n-type beta-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped beta-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm-2. The film remained beta-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 degrees C for 0.5 h led to the formation of a conducting surface layer about 0.5 pm-thick with carrier density 1017 cm-3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

키워드

Gallium Oxide; Polymorphs; Implantation; Hydrogenation; Vacancies

제목: Conducting surface layers formed by hydrogenation of O-implanted beta-Ga2O3

저자: Polyakov, A. Y.; Vasilev, A. A.; Shchemerov, I. V.; Chernykh, A. V.; Shetinin, I. V.; Zhevnerov, E. V.; Kochkova, A. I.; Lagov, P. B.; Miakonkikh, A. V.; Pavlov, Yu. S.; Kobets, U. A.; Lee, In-Hwan; Kuznetsov, A.; Pearton, S. J.

DOI: 10.1016/j.jallcom.2023.169258

발행일: 2023-06-05

유형: Article

저널명: Journal of Alloys and Compounds

권: 945