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Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition
- Hur, Jae-Sung;
- Jang, Samseok;
- Kim, Donghwan;
- Byun, Dongjin;
- Son, Chang-Sik
Citations
WEB OF SCIENCE
8초록
ZnO thin films were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 degrees C to 300 degrees C. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation, which changed with the growth temperature.
키워드
Zinc oxide; Atomic layer deposition (ALD); Microstructure; ROOM-TEMPERATURE
- 제목
- Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition
- 저자
- Hur, Jae-Sung; Jang, Samseok; Kim, Donghwan; Byun, Dongjin; Son, Chang-Sik
- 발행일
- 2008-11
- 유형
- Article; Proceedings Paper
- 권
- 53
- 호
- 5
- 페이지
- 3033 ~ 3037