Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition

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초록

ZnO thin films were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 degrees C to 300 degrees C. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation, which changed with the growth temperature.

키워드

Zinc oxideAtomic layer deposition (ALD)MicrostructureROOM-TEMPERATURE
제목
Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition
저자
Hur, Jae-SungJang, SamseokKim, DonghwanByun, DongjinSon, Chang-Sik
DOI
10.3938/jkps.53.3033
발행일
2008-11
유형
Article; Proceedings Paper
저널명
Journal of the Korean Physical Society
53
5
페이지
3033 ~ 3037