Reconfigurable Logic-In-Memory Cell Comprising Triple-Gated Feedback Field-Effect Transistors

초록

A reconfigurable logic-in-memory (R-LIM) cell performs logic-in-memory functions as well as reconfigurable logic gates. The R-LIM cell is constructed with triple-gated (TG) feedback field-effect transistors (FBFETs) that are reconfigured in n-channel or p-channel modes via electrostatic doping. Each TG FBFET has one control gate electrode and two program-gate electrodes that determine the channel mode. Their reconfigurability enables the symmetrical operation of the n-channel and p-channel modes through an on-current ratio of 1:04. Furthermore, the R-LIM cell performs eight Boolean logic operations, storing the logic outputs for approximate to 100 s under zero-bias conditions. The R-LIM cell is useful for developing in-memory computing systems with high energy efficiency and functional logic. A reconfigurable logic-in-memory cell comprised of triple-gated feedback field-effect transistors performs logic-in-memory functions as well as reconfigurable logic gates. In the reconfigurable logic gate operations, the n-channel and p-channel modes of the component transistors exhibit their symmetrical switching characteristics. The reconfigurable logic-in-memory cell performs eight Boolean logic operations, storing the logic outputs for approximate to 100 s under zero-bias conditions.image

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