A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

초록

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on-state voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

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