Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes

초록

In this study, we design a true random-number generator (TRNG) using a gated p(+)-i-n(+) diode that amplifies random fluctuations through a feedback process in a silicon nanosheet channel. The TRNG generates digitalized random bits via output voltage toggling with only a series transistor and exhibits a raw signal margin of 1 V enough to distinguish between the random bits '1' and '0' without amplification and post processing steps. The random bits generated by the TRNG pass the National Institute of Standards and Technology tests without post-processing. Moreover, the TRNG maintains a uniform probability of occurrence '1's as 0.5 under iterative operations (2x10(5) pulses). The characteristics of the random bit sequence are examined using four figures of merit: endurance, uniformity, Hamming distance, and correlation coefficient. The keys generated by the TRNG are unique and uncorrelated, exhibiting near-ideal Hamming distances and correlation coefficients. Furthermore, image encryption and decryption demonstrate the cryptographic characteristics of TRNGs.

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