상세 보기
Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs
- Yi, Boram;
- Lee, Boung Jun;
- Oh, Jin-Hwan;
- Kim, Ji-Seon;
- Kim, Jun-Hyeok;
- ... Yang, Ji-Woon
Citations
WEB OF SCIENCE
6Citations
SCOPUS
10초록
A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and are verified through 3-D technology computer-aided design (TCAD) simulations. The results of the modeling show good agreement with the TCAD data, for both structural variations and energy variations of the energetic particles.
키워드
Compact model; FinFET; parasitic bipolar junction transistor (BJT) current; single-event transient (SET); SIMULATION; MOSFETS; DEVICES; PLANAR; LOGIC
- 제목
- Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs
- 저자
- Yi, Boram; Lee, Boung Jun; Oh, Jin-Hwan; Kim, Ji-Seon; Kim, Jun-Hyeok; Yang, Ji-Woon
- 발행일
- 2018-03
- 유형
- Article
- 권
- 65
- 호
- 3
- 페이지
- 866 ~ 870