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Contact barriers in a single ZnO nanowire device
- Kim, Kanghyun;
- Kang, Haeyong;
- Kim, Hyeyoung;
- Lee, Jong Soo;
- Kim, Sangtae;
- ... Kim, Gyu-Tae;
- 외 1명
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13초록
The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be similar to 30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T < 100 K.
키워드
FIELD-EFFECT TRANSISTOR; OHMIC CONTACTS; LOW-RESISTANCE
- 제목
- Contact barriers in a single ZnO nanowire device
- 저자
- Kim, Kanghyun; Kang, Haeyong; Kim, Hyeyoung; Lee, Jong Soo; Kim, Sangtae; Kang, Woun; Kim, Gyu-Tae
- 발행일
- 2009-02
- 유형
- Article
- 권
- 94
- 호
- 2
- 페이지
- 253 ~ 256