Contact barriers in a single ZnO nanowire device

  • Kim, Kanghyun; 
  • Kang, Haeyong; 
  • Kim, Hyeyoung; 
  • Lee, Jong Soo; 
  • Kim, Sangtae; 
  • ... Kim, Gyu-Tae; 
  • 외 1명
Citations

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초록

The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be similar to 30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T < 100 K.

키워드

FIELD-EFFECT TRANSISTOR; OHMIC CONTACTS; LOW-RESISTANCE
제목
Contact barriers in a single ZnO nanowire device
저자
Kim, Kanghyun; Kang, Haeyong; Kim, Hyeyoung; Lee, Jong Soo; Kim, Sangtae; Kang, Woun; Kim, Gyu-Tae
DOI
10.1007/s00339-008-4787-5
발행일
2009-02
유형
Article
저널명
Applied Physics A: Materials Science & Processing
권
94
호
2
페이지
253 ~ 256