Current direction dependence of spin-orbit field in a crystalline ferromagnetic layer with perpendicular anisotropy

초록

We investigated the effect of spin-orbit field (SOF) on magnetization reversal in a crystalline (Ga,Mn)(As,P) ferromagnetic layer with perpendicular anisotropy. By measuring the Hall resistance hysteresis during an external field scan, we observed a clear difference between positive and negative currents. This difference increased systematically with increasing current strength, indicating the presence of a current-induced SOF in the (Ga,Mn)(As,P) film. We further explored the influence of the SOF effect on magnetization reversal by rotating the external field direction. This analysis allowed us to quantify the contributions from Rashba-type and Dresselhaus-type SOFs present in the (Ga,Mn)(As,P) film. Our results show that the SOF effect can significantly influence magnetization reversal in (Ga,Mn)(As,P) films. This effect could be exploited to develop new types of spintronic devices, such as magnetic field sensors and logic gates.

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