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Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
- 제목
- Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
- 제목 (타언어)
- Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
- 저자
- BYUN, Dong Jin
- 발행일
- 2011-10-27
- 학회명
- 2011 한국재료학회 추계학술발표대회 및 제21회 신소재 심포지엄
- 개최국가
- 대한민국
- 학회 개최일
- 2011-10-27 ~ 2011-10-29