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Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
- Kim, D.;
- Cho, K.;
- Woo, S.;
- Kim, S.
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11초록
In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm(2)/V.s, subthreshold swing of 183 mV, threshold voltage of -0.33 V, and on/off ratio of 1.34 x 10(8). These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material.
키워드
gallium compounds; indium compounds; semiconductor thin films; II-VI semiconductors; conduction bands; thin film transistors; zinc compounds; amorphous semiconductors; tin compounds; thin-film transistors; positive gate bias stress; PBS; a-ITGZO TFT; electrical characteristics; a-ITGZO channel material; amorphous indium-tin-gallium-zinc-oxide thin-film transistors; subthreshold swing; threshold voltage; acceptor-like conduction band-tail states; donor-like Gaussian states; bandgap; voltage 183; 0 mV; voltage-0; 33 V; InSnGaZnO
- 제목
- Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
- 저자
- Kim, D.; Cho, K.; Woo, S.; Kim, S.
- 발행일
- 2020-01-23
- 유형
- Article
- 권
- 56
- 호
- 2
- 페이지
- 102 ~ 103