Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors

초록

Computing-intensive applications such as big data, machine vision and learning, and artificial intelligence require efficient and compact microprocessors composed of ultra-high-density integrated circuits. Consequently, new memory and logic cells with small footprints that can be fabricated with standard complementary metal- oxide processes must be designed. Herein, a binary and ternary compatible logic-in-memory (BTC-LIM) cell comprising eight single-gated feedback field-effect transistors (FBFETs) that have an extremely low subthreshold swing (<1 mV/dec), a high ON/OFF current ratio (>107), and memory characteristics was designed and evaluated. In this cell, binary and ternary logic functions are implemented utilizing the ON or OFF states of the n- and p-channel FBFETs, and the binary logic is a subset of the ternary logic. The cell performs NAND and NOR LIM operations and maintains its output value up to 50 s under zero-bias conditions.

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