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초록
We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.
키워드
Magnetoresistance; Impact ionization; Avalanche effect; Space-charge effect; GaAs; CHARGE-LIMITED CURRENTS
- 제목
- Large Magnetoconductance in GaAs Induced by Impact Ionization
- 저자
- Kim, Taeyueb; Joo, Sungjung; Koo, Hyun Cheol; Hong, Jinki
- 발행일
- 2019-12
- 유형
- Article
- 권
- 75
- 호
- 12
- 페이지
- 1017 ~ 1020