ScholarWorks@고려대학교

상세 보기

New Extraction Method for Gate Inductances of GaAs MESFETs with Compensation of Parasitic Capacitances

  • Yoon, Kyung-Sik
제목
New Extraction Method for Gate Inductances of GaAs MESFETs with Compensation of Parasitic Capacitances
저자
Yoon, Kyung-Sik
학회명
물리,전기,전자공학회

ScholarWorks@고려대학교

02841 서울특별시 성북구 안암로 145 Tel. 02-3290-2963

COPYRIGHT © 고려대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.