Semi-insulating GaN substrates for high-frequency device fabrication

Freitas, J. A., Jr.; Gowda, M.; Tischler, J. G.; Kim, J.-H.; Liu, L.; Hanser, D.

doi:10.1016/j.jcrysgro.2008.06.038

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Semi-insulating GaN substrates for high-frequency device fabrication

Freitas, J. A., Jr.;
Gowda, M.;
Tischler, J. G.;
Kim, J.-H.;
Liu, L.;
외 1명

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42

초록

Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire Substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating. (c) 2008 Elsevier B.V. All rights reserved.

키워드

characterization; impurities; X-ray diffraction; hydride vapor phase epitaxy; nitrides; semiconducting materials; VAPOR-PHASE EPITAXY; GALLIUM NITRIDE; GROWTH; TEMPLATES; LAYERS

제목: Semi-insulating GaN substrates for high-frequency device fabrication

저자: Freitas, J. A., Jr.; Gowda, M.; Tischler, J. G.; Kim, J.-H.; Liu, L.; Hanser, D.

DOI: 10.1016/j.jcrysgro.2008.06.038

발행일: 2008-08-15

유형: Article; Proceedings Paper

저널명: Journal of Crystal Growth

권: 310

호: 17

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