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초록
Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.
키워드
filament model; mutlilevel resistance state; RE-RAM; resistive switching effect; solid electrolyte resistive switching memory; RESISTANCE WINDOW; DEVICE; FILMS
- 제목
- In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
- 저자
- Choi, Sang-Jun; Park, Gyeong-Su; Kim, Ki-Hong; Cho, Soohaeng; Yang, Woo-Young; Li, Xiang-Shu; Moon, Jung-Hwan; Lee, Kyung-Jin; Kim, Kinam
- 발행일
- 2011-08-02
- 유형
- Article
- 권
- 23
- 호
- 29
- 페이지
- 3272 ~ +