Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

Leiner, J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.; Kirby, B. J.; Lee, H.; Yoo, T.; Lee, Sanghoon

doi:10.1063/1.3536669

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Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

Leiner, J.;
Tivakornsasithorn, K.;
Liu, X.;
Furdyna, J. K.;
Dobrowolska, M.;
... Lee, Sanghoon;
외 3명

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초록

Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536669]

키워드

THIN-FILMS; SEMICONDUCTORS; ANISOTROPY

제목: Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

저자: Leiner, J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.; Kirby, B. J.; Lee, H.; Yoo, T.; Lee, Sanghoon

DOI: 10.1063/1.3536669

발행일: 2011-04-01

유형: Article

저널명: Journal of Applied Physics

권: 109

호: 7