Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

초록

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode beta-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of similar to 10(5) were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and beta-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent I-DS-V-DS output as well as I-DS-V-GS transfer characteristics with a high on/off ratio (similar to 10(8)) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

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