Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes

  • Jeon, Joon-Woo
  • Yum, Woong-Sun
  • Oh, Semi
  • Kim, Kyung-Kook
  • Seong, Tae-Yeon
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초록

We report the improved thermal stability of Ag reflectors for GaN-based light-emitting diodes (LEDs) using Ag nano-dots (similar to 65-similar to 190 nm in size). The nano-dot Ag samples show much higher reflectance than the Ag only samples. The annealed nano-dot Ag samples exhibit a smoother surface, where the grains contain numerous micro-twins. < 111 > texture becomes more dominantly evolved in the nano-dot Ag samples than in the Ag only samples after annealing. LEDs with the 300 degrees C-annealed nano-dot Ag reflectors exhibit 15%-36% higher output power (at 20 mA) than LEDs with the 300 and 400 degrees C-annealed Ag only reflectors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737015]

키워드

P-TYPE GANOHMIC CONTACTSLOW-RESISTANCETHIN-FILMSSILVERAGGLOMERATIONGROWTH
제목
Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes
저자
Jeon, Joon-WooYum, Woong-SunOh, SemiKim, Kyung-KookSeong, Tae-Yeon
DOI
10.1063/1.4737015
발행일
2012-07-09
유형
Article
저널명
Applied Physics Letters
101
2