Recent Progress of Oxide Semiconductor-Based Artificial Synaptic Transistors

  • Lee, Sein; 
  • Park, Jeong-Min; 
  • Ham, Wooho; 
  • Lee, Junseo; 
  • Hwang, Gyeong-Hun; 
  • 외 3명
Citations

WEB OF SCIENCE

6
Citations

SCOPUS

5

초록

Conventional digital computing follows the von Neumann architecture, where memory and processing units are physically separated, resulting in limited throughput caused by data transfer bottlenecks, and high power consumption. In contrast, the human brain integrates computation and memory at synapses, enabling highly parallel and energy-efficient processing with only similar to 20 W. Neuromorphic computing aims to replicate this efficiency by merging storage and computation within hardware. Oxide semiconductors (OSs) have emerged as promising candidates for synaptic transistors due to their favorable electrical, optical, and structural characteristics, as well as compatibility with low-temperature and large-area processing. This review outlines the fundamental principles of biological synapses and synaptic plasticity metrics, examines recent developments in OS-based synaptic transistors, and discusses prospects and challenges in implementing OS synaptic devices for neuromorphic hardware and artificial intelligence applications.

키워드

oxide semiconductor; artificial intelligence; thin-film transistor; synapse; neuromorphic device; THIN-FILM TRANSISTORS; ATOMIC LAYER; LOW-POWER; GATE STACK; IGZO TFTS; TRANSPARENT; NETWORK; ELECTRONICS; PERFORMANCE; EMULATION
제목
Recent Progress of Oxide Semiconductor-Based Artificial Synaptic Transistors
저자
Lee, Sein; Park, Jeong-Min; Ham, Wooho; Lee, Junseo; Hwang, Gyeong-Hun; Namgung, Seok Daniel; Song, Min-Kyu; Kwon, Jang-Yeon
DOI
10.1021/acsaelm.5c01798
발행일
2026-03-10
유형
Review
저널명
ACS Applied Electronic Materials
권
8
호
5
페이지
1952 ~ 1972