Electrical properties and X-ray spectrum of semi-insulating CdZnTe : Pb crystals

초록

High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 x 10(19) cm(-3). The resistivity of Pb-doped CdZnTe single crystal was 2 x 10(9) Omega cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log(p) versus 1000/T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and Am-241 spectrum measurements. (C) 2008 Published by Elsevier B.V.

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