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SiGe 135-GHz amplifier with inductive positive feedback operating near f(max)
- Kim, Hyunchul;
- Yun, Jongwon;
- Song, Kiryong;
- Rieh, Jae-Sung
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4초록
A common base five-stage D-band amplifier developed in a 0.18-m SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 x 0.56 mm(2).
키워드
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave amplifiers; power consumption; inductive positive feedback; five-stage D-band amplifier; HBT technology; inductive positive feedback technique; power consumption; frequency 135 GHz; power 67; 2 mW; gain 12; 2 dB; size 0; 18 mum; SiGe
- 제목
- SiGe 135-GHz amplifier with inductive positive feedback operating near f(max)
- 저자
- Kim, Hyunchul; Yun, Jongwon; Song, Kiryong; Rieh, Jae-Sung
- 발행일
- 2013-09-12
- 유형
- Article
- 권
- 49
- 호
- 19
- 페이지
- 1229 ~ 1230
- 언어
- ENG
- 출판사
- INST ENGINEERING TECHNOLOGY-IET
- 발행국가
- 영국
- 분량
- 2 페이지
- ISSN
- E 1350-911X
P 0013-5194